Si-on-金刚石
基于键合技术实现了金刚石基硅复合衬底,有望解决高功率密度硅器件散热能力不足的难题
Based on the bonding technology, Si-on-diamond substrate has been realized, which is expected to solve the problem of insufficient heat dissipation of Si devices with high power density.
Based on the bonding technology, Si-on-diamond substrate has been realized, which is expected to solve the problem of insufficient heat dissipation of Si devices with high power density.
北京青禾晶元半导体科技有限责任公司
电话:010-82243602
地址:北京市海淀区花园北路25号EPARK
关注我们